A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• tone resist) or soluble (positive tone resist) in the subsequent development step. The drive to fabricate devices with ever reducing dimensions has meant that alternatives to diffraction-limited photon-based lithography have evolved, using charged particle beams [103]. Electron beam lithography (EBL

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput. Keywords: charged particle beams

• lithography are the leading top-down methods. In this review we focus on another top-down generic technology, namely nanostructuring by charged particle beams used to expose a resist, which can be used as a mask for pattern transfer etching and metal deposition etc. Nanolithography using charged particle

• particle beams and the resolution obtained is set by the scattering of the beam in the resist layer and the underlying substrate. Scattering and range depend upon a combination of electron scattering and nuclear scattering. The latter is of particular importance for heavy ions like Ga+ and causes damage to